PD - 93858
IRHM9260
JANSR2N7426
200V, P-CHANNEL
REF: MIL-PRF-19500/660
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
RAD-Hard
™
®
HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9260
100K Rads (Si)
IRHM93260
300K Rads (Si)
RDS(on)
0.160Ω
0.160Ω
I D QPL Part Number
-27A JANSR2N7426
-27A JANSF2N7426
TO-254AA
International Rectifier’s RAD-HardTM HEXFET®
MOSFET technology provides high performance
power MOSFETs for space applications. This technology has over a decade of proven performance
and reliability in satellite applications. These devices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability
of electrical parameters.
Features:
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Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-27
-17
-108
250
2.0
±20
500
-27
25
-9.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
C
g
For footnotes refer to the last page
www.irf.com
1
11/27/00
