TPC8027
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOS IV)
TPC8027
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
•
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 2.1 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 48 S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
•
Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
18
Pulse
Drain current
(Note 1)
IDP
72
PD
1.9
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
A
W
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.08 g (typ.)
PD
1.0
EAS
84
mJ
IAR
18
A
EAR
0.029
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
(Note 2b)
Single pulse avalanche energy
(Note 3)
W
Circuit Configuration
Repetitive avalanche energy
(Note 2a) (Note 4)
7
6
5
1
Avalanche current
8
2
3
4
Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2007-02-15
