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IS43DR16320B-3DBLI

製品説明
仕様・特性

IS43/46DR86400B, IS43/46DR16320B AUGUST 2012 512Mb (x8, x16) DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 400MHz Posted CAS Programmable CAS Latency: 3, 4, 5 and 6 Programmable Additive Latency: 0, 1, 2, 3, 4 and 5 Write Latency = Read Latency-1 Programmable Burst Sequence: Sequential or Interleave Programmable Burst Length: 4 and 8 Automatic and Controlled Precharge Command Power Down Mode Auto Refresh and Self Refresh Refresh Interval: 7.8 µs (8192 cycles/64 ms) OCD (Off-Chip Driver Impedance Adjustment) ODT (On-Die Termination) Weak Strength Data-Output Driver Option Bidirectional differential Data Strobe (Singleended data-strobe is an optional feature) OPTIONS • • • • • • • • • On-Chip DLL aligns DQ and DQs transitions with CK transitions Differential clock inputs CK and CK# VDD and VDDQ = 1.8V ± 0.1V PASR (Partial Array Self Refresh) SSTL_18 interface tRAS lockout supported Read Data Strobe supported (x8 only) Internal four bank operations with single pulsed RAS Operating temperature: Commercial (TA = 0°C to +70°C ; TC = 0°C to +85°C) Industrial (TA = -40°C to +85°C; TC = -40°C to +95°C) Automotive, A1 (TA = -40°C to +85°C; TC = -40°C to +95°C) Automotive, A2 (TA = -40°C to +105°C; TC = -40°C to +105°C) ADDRESS TABLE • Configuration: − 64Mx8 (16M x 8 x 4 banks) − 32Mx16 (8M x 16 x 4 banks) • Package: − 60-ball TW-BGA for x8 − 84-ball TW-BGA for x16 Parameter Row Addressing Column Addressing Bank Addressing Precharge Addressing 64Mx8 A0-A13 A0-A9 BA0-BA1 A10 32Mx16 A0-A12 A0-A9 BA0-BA1 A10 Clock Cycle Timing -5B Speed Grade CL-tRCD-tRP tCK (CL=3) tCK (CL=4) tCK (CL=5) tCK (CL=6) Frequency (max) -37C -3D -25E -25D Units DDR2-400B 3-3-3 5 5 5 5 200 DDR2-533C 4-4-4 5 3.75 3.75 3.75 266 DDR2-667D 5-5-5 5 3.75 3 3 333 DDR2-800E 6-6-6 5 3.75 3 2.5 400 DDR2-800D 5-5-5 5 3.75 2.5 2.5 400 tCK ns ns ns ns MHz Note: The -5B device specification is shown for reference only. Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. – www.issi.com – Rev. I, 8/01/2012 1

ブランド

ISSI

会社名

Integrated Silicon Solution Inc

本社国名

U.S.A

事業概要

主要半導体製品としては、会社設立以来の多様な製品群を揃えたSRAM製品、長期供給を行なって来たEDOから最新のDDR3に至る迄の幅広いDRAM製品を始めとして、中華圏のビジネスインフラの利点を最大限活用したNOR Flash製品やアナログ製品、更には高品質、長期供給が要求される車載用製品をラインアップしている。

供給状況

 
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