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SSM3K329R,LFT

製品説明
仕様・特性

SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) : RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±12 V DC ID (Note 1) 3.5 Pulse IDP (Note 1) 7.0 Drain current Power dissipation PD (Note 2) t = 10s 1 2 1: Gate A W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C SOT-23F 2: Source 3: Drain JEDEC ― JEITA ― TOSHIBA 2-3Z1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 11 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on a FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration Start of commercial production 2010-02 1 2014-03-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
Not pic File
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