Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140, 141, 142 NPN
TIP145, 146, 147 PNP
TO- 3PN Non Isolated
Plastic Package
Designed for General Purpose Amplifier and Low Frequency Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current Continuous
Total Power Dissipation at Tc = 25ºC
Operating and Storage Junction
Temperature Range
*5ms < 10% Duty Cycle
THERMAL RESISTANCE
From Junction to case
From Junction to Ambient in free air
SYMBOL
VCBO
VCEO
VEB0
IC
*ICM
IB
PD
TIP140
TIP145
60
60
TIP141
TIP146
80
80
5.0
10
15
0.5
125
TIP142
TIP147
100
100
UNIT
V
V
V
A
A
A
W
Tj, Tstg
- 65 to +150
ºC
Rth (j-c)
Rth (j-a)
1.0
35.7
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
TEST CONDITION
DESCRIPTION
SYMBOL
**VCEO (sus)
IC =30mA, IB=0
Collector Emitter Sustaining Voltage
TIP140/145
TIP141/146
TIP142/147
ICEO
VCE =1/2 rated VCEO, IB=0
Collector Cutoff Current
ICBO
VCB =Rated VCBO, IE=0
Collector Cutoff Current
IEBO
VEB =5.0 V, IC=0
Emitter Cutoff Current
**hFE
IC =5A, VCE =4V
DC Current Gain
IC =10A, VCE =4 V
**VCE (sat)
IC =5A, IB=10mA
Collector Emitter Saturation Voltage
IC =10A, IB =40mA
**VBE (sat)
IC =10A, IB =40mA
Base Emitter Saturation Voltage
**VBE (on)
IC =10A, VCE =4 V
Base Emitter On Voltage
SWITCHING TIME
DESCRIPTION
Delay Time
Rise Time
TEST CONDITION
SYMBOL
td
VCC=30V, IC=5A, IB=20mA,
tr
Duty Cycle < 2%, IB1=IB2, RC &
ts
Storage Time
RB varied Tj=25ºC
tf
Fall Time
**Pulsed test : Pulse witdh = 300µs, duty cycle < 2%
µ
MIN
TYP
MAX
UNIT
2.0
1.0
2.0
V
V
V
mA
mA
mA
2.0
3.0
3.5
3.0
V
V
V
V
MAX
UNIT
µs
µs
µs
60
80
100
1000
500
MIN
TYP
0.15
0.55
2.5
2.5
µs
TIP140_147 Rev190706E
Continental Device India Limited
Data Sheet
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