UTC 2SA1015
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
1
TO-92
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
VCBO
VCEO
VEBO
Pc
Ic
IB
Tj
TSTG
-50
-50
-5
400
-150
-50
125
-65 ~ +150
V
V
V
mW
mA
mA
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Base current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
NF
Ic=-100µA,IE=0
Ic=-10mA,IB=0
IE=-10µA,Ic=0
VCB=-50V,IE=0
VEB=-5V,Ic=0
VCE=-6V,Ic=-2mA
VCE=-6V,Ic=-150mA
Ic=-100mA,IB=-10mA
Ic=-100mA,IB=-10mA
VCE=-10V,Ic=-1mA
VCB=-10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=-6V
RG=1kΩ,f=100Hz
-50
-50
-5
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Noise Figure
UTC
TYP
MAX
-100
-100
700
120
25
-0.1
-0.3
-1.1
4.0
0.5
7.0
6
80
UNISONIC TECHNOLOGIES CO. LTD
UNIT
V
V
V
nA
nA
V
V
MHz
pF
dB
1
QW-R201-004,B
