RN1101∼RN1106
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1101, RN1102, RN1103,
RN1104, RN1105, RN1106
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
With built-in bias resistors
Simplified circuit design
Reduced number of parts and simplified manufacturing process
Complementary to RN2101~ RN2106
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1101
4.7
4.7
RN1102
10
10
RN1103
22
22
RN1104
47
47
RN1105
2.2
47
RN1106
4.7
47
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ).
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
RN1101~1106
RN1101~1104
RN1105, 1106
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Rating
Unit
VCBO
50
V
VCEO
50
V
10
VEBO
5
V
IC
RN1101~1106
100
mA
PC
100
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
