2SK3301
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (π-MOSIII)
2SK3301
Switching Regulatorand DC-DC Converter Applications
•
Unit: mm
Low drain-source on-resistance: RDS(ON) = 15 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 0.65 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
•
Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC (Note 1)
ID
1
Pulse
(Note 1)
IDP
2
Drain power dissipation (Tc = 25°C)
PD
20
W
JEDEC
―
Single pulse avalanche energy
(Note 2)
EAS
140
mJ
JEITA
―
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
1
3
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 257 mH, RG = 25 Ω, IAR = 1 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Start of commercial production
1999-12
1
2013-11-01
