DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES
PACKAGE DRAWING (UNIT: mm)
• Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA)
• High PT in small dimension with general-purpose
PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A
• Complementary transistor with 2SD1616 and 1616A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Symbol
VCBO
Ratings
2SB1116 2SB1116A
−60
−80
−50
Unit
V
−60
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
−6.0
Collector current (DC)
IC(DC)
−1.0
A
Collector current (pulse)
IC(pulse)*
−2.0
A
Total power dissipation
PT
0.75
Junction temperature
Tj
W
°C
Storage temperature
Tstg
150
−55 to +150
V
V
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Symbol
Conditions
2SB1116, 1116A
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = −60 V, IE = 0
−100
nA
Emitter cutoff current
IEBO
VEB = −6.0 V, IC = 0
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −100 mA
135
DC current gain
hFE2 **
VCE = −2.0 V, IC = −1.0 A
81
−600
−650
−700
Collector saturation voltage
VCE(sat) **
IC = −1.0 A, IB = −50 mA
−0.20
−0.3
V
Base saturation voltage
VBE(sat) **
IC = −1.0 A, IB = −50 mA
−0.9
−1.2
V
DC base voltage
VBE **
Output capacitance
Cob
VCE = −2.0 V, IC = −50 mA
600/400
VCB = −10 V, IE = 0, f = 1.0 MHz
fT
VCE = −2.0 V, IC = −100 mA
Turn-on time
ton
Storage temperature
tstg
VCC = −10 V, IC = −100 mA
IB1 = −IB2 = −10 mA,
VBE(off) = 2 to 3 V
Gain bandwidth product
Fall time
tf
mV
25
70
pF
120
0.07
MHz
µs
0.70
µs
0.07
µs
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16195EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
