High-Performance T-13/4 (5 mm)
TS AlGaAs Infrared (875 nm)
Lamp
Technical Data
Features
• Very High Power TS AlGaAs
Technology
• 875 nm Wavelength
• T-13/4 Package
• Low Cost
• Very High Intensity:
HSDL-4220 - 38 mW/sr
HSDL-4230 - 75 mW/sr
• Choice of Viewing Angle:
HSDL-4220 - 30°
HSDL-4230 - 17°
• Low Forward Voltage for
Series Operation
• High Speed: 40 ns Rise Times
HSDL-4200 Series
HSDL-4220 30°
HSDL-4230 17°
• Copper Leadframe for
Improved Thermal and
Optical Characteristics
Applications
• IR Audio
• IR Telephones
• High Speed IR
Communications
IR LANs
IR Modems
IR Dongles
• Industrial IR Equipment
• IR Portable Instruments
Description
Package Dimensions
5.00 ± 0.20
(0.197 ± 0.008)
8.70 ± 0.20
(0.343 ± 0.008)
1.14 ± 0.20
(0.045 ± 0.008)
2.35
MAX.
(0.093)
0.70
MAX.
(0.028)
31.4 MIN.
(1.23)
CATHODE
0.50 ± 0.10 SQUARE
(0.020 ± 0.004)
1.27
NOM.
(0.050)
5.80 ± 0.20
(0.228 ± 0.008)
• Interfaces with Crystal
Semiconductor CS8130
Infrared Transceiver
CATHODE
2.54 NOM.
(0.100)
The HSDL-4200 series of emitters
are the first in a sequence of
emitters that are aimed at high
power, low forward voltage, and
high speed. These emitters utilize
the Transparent Substrate, double
heterojunction, Aluminum Gallium Arsenide (TS AlGaAs) LED
technology. These devices are
optimized for speed and efficiency
at emission wavelengths of 875
nm. This material produces high
radiant efficiency over a wide
range of currents up to 500 mA
peak current. The HSDL-4200
series of emitters are available in
a choice of viewing angles, the
HSDL-4230 at 17° and the
HSDL-4220 at 30°. Both lamps
are packaged in clear T-13/4
(5 mm) packages.