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STS7C4F30L
STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.070Ω - 4A SO-8 STripFET™ POWER MOSFET TYPE s s s s RDS(on) ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) s VDSS 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω TYPICAL RDS(on) (P-Channel) = 0.070 Ω 100% AVALANCHE TESTED STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGMENT IN CELLULAR PHONES ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage N-CHANNEL P-CHANNEL Unit 30 30 V 30 30 V ± 20 ± 20 V ID Drain Current (continuos) at TC = 25°C Single Operating 7 4 A ID Drain Current (continuos) at TC = 100°C Single Operating 4.4 2.5 A IDM (• ) Drain Current (pulsed) 28 16 A PTOT Total Dissipation at TC = 25°C Dual Operating Total Dissipation at TC = 25°C Single Operating 2 1.6 2 1.6 W W Tstg Tj Storage Temperature Max. Operating Junction Temperature –60 to 150 °C 150 °C ( •)Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed April 2001 1/10
STM
STMicroelectronics NV
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