PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE:
TYPE: IRFBF30
TO-220AB
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
VDSS
VDGR
ID
IDM
VGS
PD
IL
TJ & Tstg
TL
ELECTRICAL CHARACTERISTICS TA @ 25°C
°
Parameters
Symbol
Test Conditions
Drain Source
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
900
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
3.6
14
±20
125
-55 to +150
Min
900
Typ
Unit
Vdc
4.0
2.0
Max
Vdc
Gate – Body Leakage
Current
Zero Gate Voltage
Drain Current
IGSS
VGS = 20V
100
nA
IDSS
VDS = 900V, VGS = 0V
VDS = 720V, VGS = 0V, TJ = 125°C
0.1
0.5
mA
mA
On State Drain Current
ID(on)
Drain Source OnResistance
Forward
Transconductance
Drain-Source On
Voltage
Drain-Source-On
Voltage
Input Capacitance
rDS(on)
VGS = 10V, ID = 2.2A
gFS
VDS = 100V, ID =2.2A
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
Adc
3.7
2.3
Ohms
mhos
VDS(on)
Vdc
VDS(on)
Vdc
Ciss
1200
VGS = 0V, VDS = 25V, f = 1 MHz
pF
320
pF
200
pF
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