SSM3K12T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K12T
DC-DC Converter
High Speed Switching Applications
•
•
Small Package
Low ON-resistance
•
High speed
Unit: mm
: Ron = 95 mΩ (max) (@VGS = 10 V)
: Ron = 145 mΩ (max) (@VGS = 4.5 V)
: ton = 21 ns
: toff = 16 ns
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±20
V
DC
ID
3.0
Pulse
IDP (Note 2)
6.0
Drain current
Drain power dissipation (Ta = 25°C)
PD (Note 1)
0.7
A
W
t = 10 s
1.25
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 10 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm )
Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
1
2007-11-01
