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2SA1585S-TP
2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (−20V, −3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) Structure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 3.0±0.2 5 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 ∗ Abbreviated symbol: AE ∗ Denotes h 3Min. 1.6±0.1 2±0.2 3±0.2 1.5±0.1 (15Min.) 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 −0.05 2.5 +0.4 −0.1 0.5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base FE Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V 2SB1424 IC Collector current 2SA1585S ICP Collector power dissipation 2SB1424 2SA1585S PC −3 −2 −5 0.5 0.4 A A(Pulse) ∗ W Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C ∗ Single pulse Pw=10ms Rev.A 1/3 +0.15 0.45 −0.05
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