Photomicrosensor (Transmissive)
EE-SX1128
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
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•
•
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General-purpose model with a 4.2-mm-wide slot.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
Horizontal sensing aperture.
RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Symbol
Forward current
Rated value
50 mA (see note 1)
IF
Pulse forward current IFP
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
E
Anode
Cathode
Collector
Emitter
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IC
20 mA
PC
100 mW (see note 1)
±0.100
4 < × ≤ 18
Topr
–25°C to 85°C
Tstg
–30°C to 100°C
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
0<×≤4
A
K
C
E
VECO
Soldering temperature
C
Name
30 V
Ambient
Operating
temperature
Storage
Internal Circuit
Terminal No.
VCEO
Collector dissipation
A
4V
Collector–Emitter
voltage
Collector current
K
VR
Emitter–Collector
voltage
Detector
1 A (see note 2)
Reverse voltage
±0.200
■ Ordering Information
Description
Model
Photomicrosensor (transmissive)
EE-SX1128
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 10 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
Detector
Forward voltage
Reverse current
Emitter
ILEAK
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Collector–Emitter saturated voltage VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Photomicrosensor (Transmissive)
EE-SX1128
145
