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TTA1452BS4XS
TTA1452B Bipolar Transistors Silicon PNP Epitaxial Type TTA1452B 1. Applications • High-Current Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A) (2) High speed switching: tstg = 1 µs (typ.) (3) Complementary to TTC3710B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 Emitter-base voltage VEBO -6 Collector current (DC) (Note 1) IC -12 Collector current (pulsed) (Note 1) ICP -15 Base current IB -2 Collector power dissipation PC 2 Collector power dissipation (Tc = 25 ) A W PC 30 Tj 150 Storage temperature Tstg -55 to 150 Mounting torque TOR 0.6 Junction temperature Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production ©2015 Toshiba Corporation 1 2012-09 2015-08-06 Rev.4.0
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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