2SA1721
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1721
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
•
High voltage: VCBO = −300 V, VCEO = −300 V
•
Low saturation voltage: VCE (sat) = −0.5 V (max)
•
Small collector output capacitance: Cob = 5.5 pF (typ.)
•
Unit: mm
Complementary to 2SC4497
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−300
V
Collector-emitter voltage
VCEO
−300
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Base current
IB
−20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Tstg
−55 to 150
Storage temperature range
JEDEC
TO-236MOD
JEITA
SC-59
°C
TOSHIBA
2-3F1A
°C
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1988-09
1
2014-03-01
