HOME在庫検索>在庫情報

部品型式

1SS397-TE85L

製品説明
仕様・特性

1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V (typ.) High voltage Unit: mm : VR = 400V (min.) Fast reverse recovery time : trr = 0.5μs (typ.) Small total capacitance : CT = 2.5pF (typ.) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Maximum (peak) reverse Voltage Average forward current IO 100 mA IFSM 2 A Power dissipation P 100 mW Junction temperature Tj 125 °C Tstg −55∼125 °C Surge current (10ms) Storage temperature range JEDEC ― JEITA SC-70 TOSHIBA 1-2P1D Weight: 0.006g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) ― VF (2) Characteristic Min Typ. Max IF = 10mA ― 0.8 ― ― IF = 100mA ― 1.0 1.3 IR (1) ― VR = 300V ― ― 0.1 IR (2) ― VR = 400V ― ― 1.0 Total capacitance CT ― VR = 0, f = 1MHz ― 2.5 5.0 pF Reverse recovery time trr ― IF = 10mA ― 0.5 ― μs Forward voltage Reverse current Test Condition 1 (Fig.1) Unit V μA 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
Not pic File
お探しの1SS397-TE85Lは、clevertechの営業スタッフが市場調査を行いメールにて見積回答致します。

「見積依頼」をクリックして どうぞお問合せ下さい。


当サイトの取引の流れ

見積依頼→在庫確認→見積回答→注文→検収→支払 となります。


お取引内容はこちら

0.1695170403