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LN340GPX
This product complies with the RoHS Directive (EU 2002/95/EC). Light Emitting Diodes LN340GPX Round Type φ4.4 mm Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color Symbol Rating PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage VR 4 V Operating ambient temperature Topr Storage temperature Tstg Yellow Green Unit d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo llo dis disc nan enan wing /w ww win con on ce ce fo .se g U tin tin typ ty ur mi RL ued ued e pe Pro co a du Relative luminous intensity (%) ty n.p bo pe type ct life d an ut cy as lat cle on es ic. t in sta co fo ge .jp rm . /en ati on . M Di ain sc te on na tin nc ue e/ d Power dissipation –25 to +85 °C –30 to +100 °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Luminous intensity IO Reverse current IR Forward voltage VF Peak emission wavelength λP Spectral half band width Δλ IO IF 0.95 2.5 1 3 5 10 30 50 µA 2.8 V nm IF = 20 mA 30 nm IF VF 1 000 30 300 10 100 5 50 3 Relative luminous intensity Ta 500 30 int en 0.3 10 565 ue an 0.5 mcd 2.2 50 on tin ce /D 1 Unit IF = 20 mA isc 3 Max IF = 20 mA 1 100 Forward current IF (mA) 1.6 1.8 2.0 2.2 10 2.4 −20 Forward voltage VF (V) Relative luminous intensity λP 0 20 40 60 80 100 Ambient temperature Ta (°C) IF Ta 50 100 Directive characteristics 80 30° 60 20° 10° 40° 0° 10° 20° 30° 40° 80° 50° 40 550 600 650 Peak emission wavelength λP (nm) Publication date: November 2008 90° 100 70° 20° 80° 500 60° 40° 70° 20 0 50° 60° 60° 80 60 40 20 0 Forward current IF (mA) Relative luminous intensity (%) Typ VR = 4 V Forward current IF (mA) 5 0.1 Min IF = 20 mA 100 Ma Luminous intensity IO (mcd) 10 Conditions 40 30 20 10 80° 20 40 60 Relative luminous intensity (%) SHD00735AEK 80 90° 100 0 0 20 40 60 80 100 Ambient temperature Ta (°C) 1
PANASONIC
パナソニック株式会社
日本
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