BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD246 Series
●
80 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
15 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-emitter voltage (RBE = 100 Ω)
E
T
E
L
O
S
B
O
BD245B
VCER
70
90
BD245C
V
115
BD245
Collector-emitter voltage (IC = 30 mA)
UNIT
55
BD245
BD245A
VALUE
45
BD245A
BD245B
V CEO
BD245C
60
80
V
100
VEBO
5
V
IC
10
A
ICM
15
A
IB
3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
80
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3
W
½LIC2
62.5
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
250
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
NOITAMROFNI
NOTES: 1.
2.
3.
4.
TCUDORP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1