General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Dimensions (Unit : mm)
1.6
1.0
0.2
0.2
0.3
0.2
Each lead has same dimensions
0~0.1
0.55
0.15
0.9
0~0.1
0.1Min.
0~0.1
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-59
(2) Base
JEDEC : SOT-346
(3) Collector
ROHM : EMT3
(1) Emitter
(2) Base
EIAJ : SC-75A
(2) Base
JEDEC : SOT-323
(1) Emitter
(1) Emitter
EIAJ : SC-70
ROHM : SMT3
(3) Collector
JEDEC : SOT-416
(3) Collector
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
Abbreviated symbol: B*
2SC1740S
(15Min.)
0.8
(2)
(3)
0.22
0.5
(1)
0.13
0~0.1
2±0.2
3±0.2
0.2
0.4 0.4
0.2
1.2
0.32
4±0.2
1.2
0.8
3Min.
0.3Min.
1.6
0.7
0.15
1.1
0.8
0.15
Structure
Epitaxial planar type
NPN silicon transistor
0.8
2.1
2.8
(2)
(3)
0.7
(1)
1.25
1.6
0.5 0.5
(1)
2.0
1.3
(2)
(3)
0.3
2.9
(2)
(3)
0.4
2SC4617
0.65 0.65
2SC4081
(1)
2SC2412K
0.95 0.95
1.9
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029 / 2SA933AS.
0.45+0.15
−0.05
0.15Max.
2.5 +0.4
−0.1
5
0.5
+0.15
0.45 −0.05
(1) (2) (3)
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol: B*
* Denotes hFE
Absolute maximum (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
IC
0.15
A
Collector current
2SC2412K, 2SC4081
0.2
Collector power
2SC4617, 2SC5658
dissipation
2SC1740S
PC
0.15
W
0.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
60
−
−
V
IC=50μA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
Conditions
BVEBO
7
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
0.1
μA
VCB=60V
Emitter cutoff current
IEBO
−
−
0.1
μA
VEB=7V
DC current transfer ratio
hFE
120
−
390
−
VCE(sat)
−
−
0.4
V
Transition frequency
fT
−
180
−
MHz
Output capacitance
Cob
−
2
3.5
pF
Collector-emitter saturation voltage
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1/3
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=−2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
2009.12 - Rev.C