This product complies with the RoHS Directive (EU 2002/95/EC).
ESD Diodes
MAZC062D
Silicon planar type
Unit: mm
For surge absorption circuit
0.40+0.10
–0.05
0.16+0.10
–0.06
■ Absolute Maximum Ratings Ta = 25°C
200
Tstg
°C
−55 to +150
Tj
Storage temperature
mW
150
Junction temperature
mA
200
PD
Unit
°C
0.4±0.2
10˚
1.1+0.3
–0.1
IFRM
Power dissipation*
Rating
1.1+0.2
–0.1
Repetitive peak forward current
2.90+0.20
–0.05
0 to 0.1
Symbol
5˚
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1.9±0.1
(0.65)
2
1
(0.95) (0.95)
Parameter
2.8+0.2
–0.3
M
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• Low joint capacity zener diode
• Two elements anode-common type
1.50+0.25
–0.05
3
■ Features
1: Cathode 1
2: Cathode 2
3: Anode
Mini3-G1 Package
EIAJ: SC-59
Note) *: Ptot = 200 mW achieved with a printed circuit board.
Marking Symbol: 6.2C
Internal Connection
3
2
ue
1
Parameter
Forward voltage
Symbol
VF
voltage*
VZ
an
Zener
ce
/D
isc
on
tin
■ Electrical Characteristics Ta = 25°C ± 3°C
en
Zener rise operating resistance
RZK
RZ
Reverse current
IR
Terminal capacitance
Ct
Ma
int
Zener operating resistance
Conditions
Min
IF = 10 mA
IZ = 5 mA
Typ
Max
Unit
0.9
1.0
V
5.9
6.5
IZ = 5 mA
30
VR = 5.5 V
VR = 0 V, f = 1 MHz
V
100
IZ = 0.5 mA
Ω
Ω
3
8
µA
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz
3. Electrostatic breakdown voltage: ±15 kV
Test method: IEC-801 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Test unit: ESS-200AX
4. *: The VZ value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
Guaranteed at 20 ms after power application.
Publication date: March 2004
SKE00009CED
1