This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3S132DG, MA3S132EG
Silicon epitaxial planar type
For switching circuits
■ Package
■ Features
M
Di ain
sc te
on na
tin nc
ue e/
d
• Code
SSMini3-F3
• Pin Name
MA3S132DG
1: Cathode 1
2: Cathode 2
3: Anode
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Rating
Maximum peak reverse voltage
80
Single
Forward current
IF
Double
Single
Peak forward
current
Single
mA
■ Marking Symbol
MA3S132DG: MO
MA3S132EG: MU
150
IFM
225
Double
Non-repetitive peak
forward surge current *
V
100
VRM
V
mA
■ Internal Connection
340
IFSM
500
Double
1: Anode 1
2: Anode 2
3: Cathode
Unit
80
VR
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• Short reverse recovery time trr
• Small terminal capacitance Ct
• Two isolated elements contained in one package, allowing highdensity mounting
3
3
mA
750
150
Junction temperature
Storage temperature
Tstg
Note) *: t = 1 s
°C
−55 to +150
Tj
°C
1
D
2
1
E
2
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
ce
/D
isc
on
tin
Parameter
Forward voltage
VF
Reverse voltage
VR
Reverse current
IR
MA3S132DG
an
Terminal capacitance
Ct
en
MA3S132EG
Ma
int
Reverse recovery time * MA3S132DG
MA3S132EG
Conditions
Min
Typ
Max
Unit
1.2
V
VR = 75 V
100
nA
VR = 0 V, f = 1 MHz
15
pF
IF = 100 mA
IR = 100 µA
80
V
2
IF = 10 mA, VR = 6 V
10
Irr = 0.1 IR , RL = 100 Ω
trr
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: October 2007
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKF00083AED
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132DG, MA3S132EG
Characteristics charts of MA3S132EG
IF VF
IR VR
VF T a
1.6
104
100°C
103
1.2
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10
Ta = 150°C
Forward voltage VF (V)
Reverse current IR (nA)
105
102
Forward current IF (mA)
103
Ta = 150°C
100°C
25°C
0.2
0.4
0.6
0.8
1.0
1.2
20
40
60
80
100
Terminal capacitance Ct (pF)
102
10
0.8
0.6
0.4
0.2
200
ce
/D
isc
on
tin
160
ue
0
120
Ma
int
en
an
Ambient temperature Ta (°C)
80
0
40
60
80
100
Reverse voltage VR (V)
SKF00083AED
160
200
Ta = 25°C
120
IF(surge)
tW
Non repetitive
102
10
1
10 −1
20
120
IF(surge) tW
103
1.0
103
80
40
f = 1 MHz
Ta = 25°C
35 V
6V
40
0
Ambient temperature Ta (°C)
1.2
VR = 75 V
0
0
−40
120
Ct VR
104
1
−40
0
Reverse voltage VR (V)
IR T a
105
3 mA
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1
0
10 mA
0.4
10
Forward voltage VF (V)
Reverse current IR (nA)
25°C
−20°C
10 −1
10 −2
102
Forward surge current IF(surge) (A)
1
IF = 100 mA
0.8
10 −1
1
10
Pulse width tW (ms)
3
