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部品型式

MT29F16G08ABABAWP:B

製品説明
仕様・特性

4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Features NAND Flash Memory MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA Features Figure 1: • Single-level cell (SLC) technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2,048 blocks – Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks • READ performance – Random READ: 25µs (MAX) – Sequential READ: 25ns (MIN) • WRITE performance – PROGRAM PAGE: 220µs (TYP) – BLOCK ERASE: 1.5ms (TYP) • Data retention: 10 years • Endurance: 100,000 PROGRAM/ERASE cycles • First block (block address 00h) guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles1 • Industry-standard basic NAND Flash command set • Advanced command set: – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – One-time programmable (OTP) commands – Two-plane commands – Interleaved die operations – READ UNIQUE ID (contact factory) – READ ID2 (contact factory) • Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status • Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion • WP# signal: write protect entire device • RESET required after power-up • INTERNAL DATA MOVE operations supported within the plane from which data is read PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__1.fm - Rev. B 2/07 EN 48-Pin TSOP Type 1 Options • Density2 – 4Gb (single die) – 8Gb (dual-die stack 1 CE#) – 8Gb (dual-die stack 2 CE#) – 16Gb (quad-die stack) • Device width: x8 • Configuration # of die # of CE# # of R/B# I/O 1 1 1 Common 2 1 1 Common 2 2 2 Common 4 2 2 Common • VCC: 2.7–3.6V • Package – 48 TSOP type I (lead-free plating) – 48 TSOP type I OCPL3 (lead-free plating) • Operating temperature – Commercial (0°C to +70°C) – Extended (–40°C to +85°C)4 Notes: 1. For further details, see “Error Management” on page 58. 2. For part numbering and markings, see Figure 2 on page 2. 3. OCPL = off-center parting line. 4. For ET devices, contact factory. 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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