2SJ668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ668
Relay Drive, DC/DC Converter and Motor Drive
Applications
Unit: mm
1.5 ± 0.2
6.5 ± 0.2
5.2 ± 0.2
4 V gate drive
0.6 MAX.
5.5 ± 0.2
1.2 MAX.
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
9.5 ± 0.3
Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
1.1 ± 0.2
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
0.8 MAX.
Characteristic
Symbol
Rating
VDSS
−60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
−5
A
Pulse (Note 1)
IDP
−20
A
Drain power dissipation (Tc=25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
−5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
3
Unit
Drain-source voltage
2
2.3 ± 0.2
1
0.1 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
0.6 MAX.
1.05 MAX.
0.6 ± 0.15
°C
DC
Drain current
2.3 ± 0.15 2.3 ± 0.15
2
1.
2.
GATE
DRAIN
（HEAT SINK）
3. SOURSE
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.35 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω,
IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-02-05
