TC7S00F/FU
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7S00F, TC7S00FU
2-Input NAND Gate
Features
•
TC7S00F
High Speed
: tpd = 7ns (Typ.) at VCC = 5 V
•
Low power dissipation
: ICC = 1 μA (Max) at Ta = 25°C
•
High noise immunity
: VNIH = VNIL = 28% VCC (min)
•
Output drive capability
: 5 LSTTL Loads
•
Symmetrical Output Impedance : |IOH| = IOL= 2mA (min)
•
Balanced propagation delays
: tpLH ≒ tpHL
•
Wide operating voltage range
: VCC = 2 to 6 V
(SMV)
TC7S00FU
Marking
Product name
E
1
(USV)
Weight
SSOP5-P-0.95
SSOP5-P-0.65A
: 0.016 g (Typ.)
: 0.006 g (Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to VCC + 0.5
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±12.5
mA
DC VCC/ground current
ICC
±25
mA
Power dissipation
PD
200
mW
Storage temperature
Tstg
−65 to 150
°C
TL
260
°C
Lead temperature (10 s)
Pin Assignment (top view)
IN B
1
IN A
2
GND
3
5 VCC
4
OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-08-03
