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2SC1815
Features
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2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
Amplifier and General Purpose Applications.
Capable of 0.4Watts of Power Dissipation.
Collector-current 0.15A
Collector-base Voltage 60V
Marking Code: C1815
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•
•
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NPN Silicon
Epitaxial Transistor
TO-92
Pin Configuration
Bottom View
E
C
A
B
E
B
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
VBEF
ICBO
ICEO
IEBO
Collector-Emitter Breakdown Voltage*
(IC=0.1mAdc, IB =0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE =0)
Emitter-Base Voltage
(IE =310mAdc)
Collector Cutoff Current
(VCB=60Vdc, IE =0Adc)
Collector Cutoff Current
(VCB=50Vdc, IE =0Adc)
Emitter Cutoff Current
(VEB =5.0Vdc, IC=0Adc)
50
Vdc
60
Vdc
1.45
Vdc
C
0.1
uAdc
0.1
uAdc
0.1
uAdc
D
ON CHARACTERISTICS
hFE(1)
VCE(sat)
VBE(sat)
VBE
DC Current Gain*
(IC=2.0mAdc, V CE=6.0Vdc)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB =10mAdc)
Base-Emitter Saturation Voltage
(IC=100mAdc, IB =10mAdc)
Base-Emitter Voltage
(IE=310mAdc)
70
700
0.25
---
Vdc
1.0
1.45
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=1.0mAdc, V CE=10Vdc, f=30MHz)
80
MHz
CLASSIFICATION OF HFE (1)
Rank
Range
O
70-140
Y
120-240
GR
200-400
G
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.010
BL
350-700
www.cnelectr.com
MAX
.190
.190
.590
.020
.160
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
