RDN120N25
Transistors
10V Drive Nch MOS FET
RDN120N25
External dimensions (Unit : mm)
Structure
Silicon N-channel
MOS FET
TO-220FN
4.5
φ3.2
2.8
1.2
1.3
14.0
5.0
8.0
15.0
Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
12.0
10.0
0.8
(1)Gate
2.54
(2)Drain
2.54
0.75
2.6
(1) (2) (3)
(3)Source
Application
Switching
Packaging specifications
Package
Type
Equivalent circuit
Bulk
Drain
−
Code
Basic ordering unit (pieces)
500
RDN120N25
∗2
Gate
Absolute maximum ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
Drain Current
Reverse Drain
Current
Source Current
(Body diode)
Avalanche Current
Avalanche Energy
Total Power Dissipation (TC=25°C)
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IDR
IDRP ∗1
IS
ISP ∗1
IAS ∗2
EAS ∗2
PD
Tch
Tstg
Limits
250
±30
12
48
12
48
12
48
12
216
40
150
−55 to +150
∗1
∗1 ESD Protection diode
∗2 Body Diode
Unit
V
V
A
A
A
A
A
A
A
mJ
W
°C
°C
Source
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 2.4mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
Thermal resistance
Parameter
Channel to case
Channel to ambient
Symbol
Limits
Unit
Rth(ch-c)
Rth(ch-a)
3.13
62.5
°C/W
°C/W
Rev.A
1/4
