This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2632
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1124
Unit: mm
4.9±0.2
8.6±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
5.9±0.2
■ Features
0.7+0.3
–0.2
0.7±0.1
13.5±0.5
pla d in
ea
ne clu
se
pla m d de
vis
ht
ne ai ma s fo
tp it f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
• Satisfactory linearity of forward current transfer ratio hFE
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open circuited) Cob
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
VCBO
150
V
Collector-emitter voltage (Base open)
VCEO
150
V
Emitter-base voltage (Collector open)
VEBO
5
IC
50
ICP
100
PC
1
Tj
150
°C
Storage temperature
Tstg
−55 to +150
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
W
Junction temperature
1 2 3
mA
Collector power dissipation
0.45+0.2
–0.1
(1.27)
mA
Peak collector current
(1.27)
V
Collector current
0.45+0.2
–0.1
(3.2)
Parameter
Collector-base voltage (Emitter open)
°C
2.54±0.15
Parameter
Symbol
Collector-emitter voltage (Base open)
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
tin
VCEO
Conditions
Min
IC = 100 µA, IB = 0
Typ
5
VEBO
IE = 10 µA, IC = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = 100 V, IE = 0
hFE
VCE = 5 V, IC = 10 mA
VCE(sat)
IC = 30 mA, IB = 3 mA
Di
sc
on
Emitter-base voltage (Collector open)
Forward current transfer ratio *
nc
e/
Collector-emitter saturation voltage
VCB = 10 V, IE = −10 mA, f = 200 MHz
fT
te
na
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
Noise voltage
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
130
Unit
V
V
1
µA
330
1
V
160
VCB = 10 V, IE = 0, f = 1 MHz
M
ain
Max
150
MHz
3
150
pF
300
mV
Pl
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
130 to 220
185 to 330
Publication date: February 2003
SJC00118BED
1
