UTC 2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BVCEO=50V
*Collector current up to 150mA
* High hFE linearity
*complimentary to 2SA1015
1
TO-92
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
VCBO
VCEO
VEBO
Pc
Ic
IB
Tj
TSTG
60
50
5
400
150
50
125
-55 ~ +150
V
V
V
mW
mA
mA
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
Base current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
Parameter
Symbol
Test conditions
Collector cut-off current
Emitter cut-off current
DC current gain(note)
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
NF
VCB=60V,IE=0
VEB=5V,Ic=0
VCE=6V,Ic=2mA
VCE=6V,Ic=150mA
Ic=100mA,IB=10mA
Ic=100mA,IB=10mA
VCE=10V,Ic=50mA
VCB=10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=6V
RG=10kΩ,f=100Hz
MAX
UNIT
100
100
700
nA
nA
0.1
0.25
1.0
2.0
1.0
3.0
1.0
V
V
MHz
pF
dB
UNISONIC TECHNOLOGIES CO. LTD
1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Noise Figure
UTC
MIN
TYP
120
25
80
QW-R201-006,C