1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM
Features
DDR3 SDRAM SODIMM
MT8JTF12864HZ – 1GB
MT8JTF25664HZ – 2GB
MT8JTF51264HZ – 4GB
Features
Figure 1: 204-Pin SODIMM (MO-268 R/C B)
• DDR3 functionality and operations supported as
defined in the component data sheet
• 204-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC3-12800, PC3-10600,
PC3-8500, or PC3-6400
• 1GB (128 Meg x 64), 2GB (256 Meg x 64),
4GB (512 Meg x 64)
• VDD = 1.5V ±0.075V
• VDDSPD = 3.0–3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Single-rank
• Serial presence-detect (SPD) EEPROM
• 8 internal device banks
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Module height: 30mm (1.181in)
Options
Marking
• Operating temperature
– Commercial (0°C ≤ T A ≤ +70°C)
• Package
– 204-pin DIMM (halogen-free)
• Frequency/CAS latency
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
None
Z
-1G6
-1G4
-1G1
Table 1: Key Timing Parameters
Data Rate (MT/s)
Speed
Grade
Industry
Nomenclature
-1G6
PC3-12800
1600
-1G4
PC3-10600
-1G1
PC3-8500
-1G0
-80B
tRP
tRC
CL = 9
CL = 8
CL = 7
CL = 6
CL = 5
(ns)
(ns)
(ns)
1333
1333
1066
1066
800
667
13.125
13.125
48.125
–
1333
1333
1066
1066
800
667
13.125
13.125
49.125
–
–
–
1066
1066
800
667
13.125
13.125
50.625
PC3-8500
–
–
–
1066
–
800
667
15
15
52.5
PC3-6400
–
–
–
–
–
800
667
15
15
52.5
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
PDF: 09005aef8441a29e
jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN
CL = 11 CL = 10
tRCD
Products and specifications discussed herein are subject to change by Micron without notice.
