High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBT12N300
IXBH12N300
VCES = 3000V
IC110 = 12A
VCE(sat) ≤ 3.2V
TO-268 (IXBT)
G
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to 150°C
3000
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
3000
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
30
12
100
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 30Ω
Clamped Inductive Load
ICM = 98
1500
A
V
C
PC
TC = 25°C
160
W
G = Gate
E = Emiiter
-55 ... +150
°C
TJM
150
-55 ... +150
°C
°C
1.13/10
g
g
G
E
C (Tab)
C
= Collector
Tab = Collector
Nm/lb.in.
4
6
TO-247 (IXBH)
°C
300
260
C (Tab)
°C
Tstg
E
TJ
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-268
TO-247
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC = 250μA, VGE = 0V
3000
VGE(th)
IC = 250μA, VCE = VGE
3.0
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 12A, VGE = 15V, Note 1
V
25 μA
1 mA
TJ = 125°C
±100
2.8
TJ = 125°C
© 2012 IXYS CORPORATION, All Rights Reserved
3.5
High Blocking Voltage
International Standard Packages
Anti-Parallel Diode
Low Conduction Losses
Advantages
V
5.0
Features
nA
3.2
V
V
Low Gate Drive Requirement
High Power Density
Applications:
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
DS100120A(10/12)
