DE375-501N21A
RF Power MOSFET
♦
♦
♦
♦
♦
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
50MHz Maximum Frequency
VDSS
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
Continuous
±20
Transient
±30
Tc = 25°C
25
Tc = 25°C, pulse width limited by TJM
150
A
IAR
Tc = 25°C
21
A
EAR
Tc = 25°C
30
mJ
5
V/ns
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
>200
V/ns
940
W
425
W
4.5
W
RthJC
0.16
C/W
RthJHS
0.36
C/W
940 W
A
IDM
=
V
ID25
0.35 Ω
V
VGSM
=
V
VGS
25 A
PDC
Maximum Ratings
=
RDS(on)
Test Conditions
500 V
ID25
Symbol
=
IS = 0
PDC
PDHS
Tc = 25°C
Derate 3.7W/°C above 25°C
PDAMB
Tc = 25°C
Symbol
Test Conditions
TJ = 25°C unless otherwise specified
VDSS
VDS = VGS, ID = 250 a
IGSS
typ.
max.
VGS = ±20 VDC, VDS = 0
IDSS
min.
VGS = 0 V, ID = 3 ma
VGS(th)
Characteristic Values
VDS = 0.8 VDSS TJ = 25°C
TJ = 125°C
VGS = 0
RDS(on)
VDS = 100 V, ID = 0.5ID25, pulse test
3.5
V
4.6
-55
Tstg
Weight
Ω
9.0
S
°C
175
TJM
TL
µA
mA
+175
-55
TJ
nA
0.35
7.6
V
50
1
6.5
5.5
±100
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
500
1.6mm (0.063 in) from case for 10 s
°C
+175
°C
300
°C
3
g
DRAIN
GATE
SG1
SG2
SD1
SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 50MHz
• Easy to mount—no insulators needed
• High power density
