GT8G121
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT8G121
Unit: mm
STROBE FLASH APPLICATIONS
! 4th Generation (Trench Gate Structure)
! Enhancement−Mode
! Low Saturation Voltage
: VCE (sat) = 7 V (Max.) (@IC = 150 A)
! 4 V Gate Drive
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
VCES
400
V
DC
VGES
±6
V
Pulse
VGES
±8
V
DC
IC
8
A
1 ms
ICP
150
A
Ta = 25°C
PC
1.1
W
Tc = 25°C
PC
20
W
Tj
150
°C
JEDEC
Tstg
−55~150
°C
JEITA
―
TOSHIBA (A) 2−7B5C (B) 2−7B6C
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
―
Weight: 0.36 g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Gate Leakage Current
IGES
VGE = 6 V, VCE = 0
―
―
10
µA
Collector Cut−off Current
ICES
VCE = 400 V, VGE = 0
―
―
10
µA
VGE (OFF)
IC = 1 mA, VCE = 5 V
0.8
―
1.5
V
IC = 150 A, VGE = 4 V (Pulsed)
―
3.5
7
V
VCE = 10 V, VGE = 0,
f = 1 MHz
―
3800
―
pF
tr
―
2.3
―
ton
―
2.5
―
tf
―
1.7
―
toff
―
2.1
―
―
―
6.25
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Cies
Rise Time
Switching Time
Turn−on Time
Fall Time
Turn−off Time
Thermal Resistance
VCE (sat)
Rth (j−c)
―
µs
°C / W
These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V / µs.
1
2002-02-06