RBV2500 - RBV2510
SILICON BRIDGE RECTIFIERS
RBV25
PRV : 50 - 1000 Volts
Io : 25 Amperes
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
FEATURES :
∅ 3.2 ± 0.1
11 ± 0.2
20 ± 0.3
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 VDC
Ideal for printed circuit board
Very good heat dissipation
Pb / RoHS Free
~ ~
17.5 ± 0.5
+
13.5 ± 0.3
*
*
*
*
*
*
*
*
*
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
2.0 ± 0.2
10
7.5 7.5
±0.2 ±0.2 ±0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
RBV
2500
50
VRMS
35
70
140
280
420
560
700
VDC
50
100
200
400
600
800
1000
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 12.5 A
IF(AV)
25
V
V
V
A
IFSM
300
A
I2 t
375
VF
1.1
A 2S
V
RATING
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
RBV
2501
100
RBV
2502
200
RBV
2504
400
RBV
2506
600
RBV
2508
800
RBV
2510
1000
IR
10
IR(H)
200
RθJC
TJ
- 40 to + 150
TSTG
- 40 to + 150
1.45
UNIT
µA
µA
°C/W
°C
°C
Notes :
1. Thermal resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
Page 1 of 2
Rev. 03 : September 9, 2005
