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MT29F2G08AADWP-ET:D

製品説明
仕様・特性

Micron Confidential and Proprietary Preliminary‡ 2Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD Figure 1: • ONFI 1.0 compliant1 • Single-level cell (SLC) technology • Organization – Page size: • x8: 2,112 bytes (2,048 + 64 bytes) • x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks • READ performance – Sequential READ: 25ns (TYP, 3.3V) – Sequential READ: 35ns (TYP, 1.8V) • WRITE performance – PROGRAM PAGE: 220µs (TYP 3.3V) , – PROGRAM PAGE: 300µs (TYP 1.8V) , • Data retention: 10 years • Endurance: 100,000 PROGRAM/ERASE cycles • First block (block address 00h) guaranteed to be valid with ECC when shipped from factory2 • Industry-standard basic NAND Flash command set • Advanced command set: – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – One-time programmable (OTP) commands – BLOCK LOCK – PROGRAMMABLE DRIVE STRENGTH – READ UNIQUE ID • Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status • Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion • LOCK signal: Enables block lock functionality (1.8V only) • WP# signal: write protect entire device • RESET required after power-up • INTERNAL DATA MOVE operations supported • Alternate method of device initialization (Nand_Init )after power up5 (Contact Factory) PDF: 09005aef82784784 / Source: 09005aef82784840 NDA_2gb_nand_m59a__1.fm - Rev. NDA 1.3 4/08 EN 63-Ball VFBGA Options • Density3: 2Gb (single die) • Device width: x8, x16 • Configuration: # of die # of CE# # of R/B# I/O 1 1 1 Common • VCC: 2.7–3.6V • VCC: 1.65–1.95V • Package – 48-pin TSOP type I CPL4 (lead-free plating) – 63-ball VFBGA (lead-free, 1.8V only) • Operating temperature: – Commercial (0°C to +70°C) – Extended (–40°C to +85°C) Notes: 1. This device will support the ONFI specification, but the data sheet does not include all of the ONFI specification. 2. see “Error Management” on page 63. 3. For part numbering and markings, seeFigure 2 on page 2 and Figure 3 on page 3. 4. CPL = center parting line 5. Only available in 1.8V VFBGA package 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. Draft 4/ 21/ 2008 Features

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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