1SS418
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS418
High Speed Switching Application
Low forward voltage
: VF (3) = 0.23V (typ.)@ IF = 5mA
CATHODE MARK
•
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
35
V
Reverse voltage
VR
30
V
Maximum (peak) forward current
IFM
200
mA
Average forward current
IO
100
mA
IFSM
1
A
P*
100
mW
Tj
125
°C
Storage temperature range
Tstg
−55 ~ 125
°C
Operating temperature range
Topr
−40 ~ 100
°C
Maximum (peak) reverse voltage
Surge current (10ms)
Power dissipation
Junction temperature
sESC
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011g(Typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Min
Typ.
Max
IF = 1mA
―
0.18
―
―
IF = 5mA
―
0.23
―
VF (3)
―
IF = 100mA
―
0.38
0.50
Reverse current
IR
―
VR = 10V
―
―
20
μA
Reverse current
IR
―
VR = 30V
―
―
50
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
15
―
pF
Forward voltage
Test Condition
Equivalent Circuit (Top View)
Unit
V
Marking
W
1
2007-11-01