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EN29LV640AT-90TIP

製品説明
仕様・特性

EN29LV640A EN29LV640A 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • JEDEC Standard compatible • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Standard DATA# polling and toggle bits feature • High performance - Access times as fast as 90 ns • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current • Support JEDEC Common Flash Interface (CFI). • Low Vcc write inhibit < 2.5V - Less than 1 μA current in standby or automatic sleep mode. • Minimum 100K program/erase endurance cycles. • Flexible Sector Architecture: - Eight 8-Kbyte sectors, One hundred and twenty-seven 32K-Word / 64K-byte sectors. - 8-Kbyte sectors for Top or Bottom boot. - Sector/Sector Group protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. • RESET# hardware reset pin - Hardware method to reset the device to read mode. • WP#/ACC input pin - Write Protect (WP#) function allows protection of outermost two boot sectors, regardless of sector protect status - Acceleration (ACC) function provides accelerated program times • Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm TFBGA • Secured Silicon Sector - Provides a 128-words area for code or data that can be permanently protected. - Once this sector is protected, it is prohibited to program or erase within the sector again. • - • Industrial Temperature Range. High performance program/erase speed Word program time: 8µs typical Sector erase time: 100ms typical Chip erase time: 16s typical GENERAL DESCRIPTION The EN29LV640A is a 64-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The EN29LV640A features 3.0V voltage read and write operation, with access times as fast as 90ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV640A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full Chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector. . This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. E, Issue Date: 2016/07/15 Elite Semiconductor Memory Technology

ブランド

EONSILICON

会社名

Eon Silicon Solution Inc

本社国名

台湾

事業概要

Eon Silicon Solution Inc. is a fabless semiconductor company focusing on non-volatile semiconductor memory, merged with Eon Silicon Devices, Inc. which has built up completely flash core technology and product IP.

供給状況

 
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