B2M, B4M, B6M
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
~
• UL recognized, file number E54214
~
• Ideal for printed circuit boards
• Applicable for automative insertion
• Middle surge current capability
• Recommended for non-automotive applications
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
Case Style MBM
PRIMARY CHARACTERISTICS
Package
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
30 A
IR
MECHANICAL DATA
MBM
5 μA
VF at IF = 0.5 A
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
150 °C
Diode variations
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
1.0 V
TJ max.
Case: MBM
Quad
per
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2M
B2
B4
B6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
Device marking code
B4M
B6M
UNIT
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forward output rectified current (fig. 1)
on glass-epoxy PCB
IF(AV)
0.5 (1)
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
I2t
5.0
A2s
TJ, TSTG
- 55 to + 150
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage drop per diode
IF = 0.5 A
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 125 °C
Typical junction capacitance per diode
4.0 V, 1 MHz
Revision: 16-Aug-13
TA = 25 °C
SYMBOL
VF
IR
CJ
B2M
B4M
1.0
5.0
100
13
B6M
UNIT
V
μA
pF
Document Number: 88898
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
