SSM6J25FE
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSIII)
SSM6J25FE
High Speed Switching Applications
Unit: mm
Optimum for high-density mounting in small packages
1.6±0.05
•
Low on-resistance:
1.2±0.05
Ron = 260mΩ (max) (@VGS = -4 V)
Drain-Source voltage
VDS
-20
Gate-Source voltage
VGSS
± 12
V
DC
ID
-0.5
Pulse
IDP
-1.5
PD
(Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation
2
5
3
V
6
4
0.12±0.05
Unit
0.5
Rating
1
0.55±0.05
Symbol
1.6±0.05
Characteristics
1.0±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.5
Ron = 430mΩ (max) (@VGS = -2.5 V)
A
ES6
0.2±0.05
•
1,2,5,6 :Drain
3 :Gate
4 :Source
JEDEC
―
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2N1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 3.0 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note:
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit (top view)
5
4
6
5
4
3
1
2
3
PH
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01