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部品型式

SSM6J25FE

製品説明
仕様・特性

SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages 1.6±0.05 • Low on-resistance: 1.2±0.05 Ron = 260mΩ (max) (@VGS = -4 V) Drain-Source voltage VDS -20 Gate-Source voltage VGSS ± 12 V DC ID -0.5 Pulse IDP -1.5 PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation 2 5 3 V 6 4 0.12±0.05 Unit 0.5 Rating 1 0.55±0.05 Symbol 1.6±0.05 Characteristics 1.0±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.5 Ron = 430mΩ (max) (@VGS = -2.5 V) A ES6 0.2±0.05 • 1,2,5,6 :Drain 3 :Gate 4 :Source JEDEC ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2N1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 3.0 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 PH 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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