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M29F032D70N6T
M29F032D 32 Mbit (4Mb x8, Uniform Block) 5V Supply Flash Memory FEATURES SUMMARY ■ SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70 ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 64 UNIFORM 64Kbyte MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithms ■ ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend ■ TSOP40 (N) 10 x 20mm UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming ■ TEMPORARY BLOCK UNPROTECTION MODE ■ COMMON FLASH INTERFACE – 64 bit Security Code ■ LOW POWER CONSUMPTION – Standby and Automatic Standby ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: ACh ■ ECOPACK® PACKAGES AVAILABLE September 2005 1/36
MICRON
Micron Technology
U.S.A
メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY
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