HOME在庫検索>在庫情報

部品型式

SI7997DP-T1-GE3

製品説明
仕様・特性

New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 30 - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 51 nC PowerPAK® SO-8 S1 6.15 mm APPLICATIONS • Battery and Load Switching 5.15 mm 1 G1 2 S2 3 S1 S2 for Notebook PCs G2 4 G1 D1 8 G2 D1 7 D2 6 D2 5 Bottom View D1 D2 P-Channel MOSFET P-Channel MOSFET Ordering Information: Si7997DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 TC = 70 °C - 60a ID TA = 25 °C - 20.8b, c - 16.6b, c TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C - 38 - 2.9b, c IAS - 30 EAS 45 TC = 25 °C 29 PD TA = 25 °C W 3.5b, c 2.2b, c TA = 70 °C Operating Junction and Storage Temperature Range mJ 46 TC = 70 °C Maximum Power Dissipation A - 100 IS TA = 25 °C L = 0.1 mH V - 60a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol b, f Maximum Junction-to-Case (Drain) Typical Maximum t  10 s RthJA 26 35 Steady State RthJC 2.2 2.7 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 85 °C/W. Document Number: 66719 S10-1826-Rev. A, 09-Aug-10 www.vishay.com 1

ブランド

VISHAYSILICONIX

供給状況

 
Not pic File
データシート
pdf

提携先在庫情報

型式 数量 D/C・lead 備考 選択
SI7997DPT1GE3 2051個 21+RoHS  
SI7997DPT1GE3 9992個    
SI7997DPT1GE3 9992個    
SI7997DPT1GE3 9992個    
ご注文方法

弊社からの見積回答メールの返信又はFAXにてお願いします。


お取引内容はこちら

0.1771469116