This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA2J1160G
Silicon epitaxial planar type
For switching circuits
■ Package
• Allowing high-density mounting
• Soft recovery characteristic: trr = 100 ns
• Code
SMini2-F3
• Pin Name
1: Anode
2: Cathode
M
Di ain
sc te
on na
tin nc
ue e/
d
■ Features
Parameter
Symbol
Reverse voltage
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ion
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.
■ Absolute Maximum Ratings Ta = 25°C
Rating
40
IFM
Non-repetitive peak forward
surge current *
IFSM
mA
500
IF(AV)
Peak forward current
mA
225
Forward current (Average)
V
100
VRM
V
40
VR
Maximum peak reverse voltage
Unit
mA
150
Junction temperature
Tstg
Note) *: t = 1 s
°C
−55 to +150
Tj
Storage temperature
■ Marking Symbol: 1H
°C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
VF
Reverse voltage
VR
ue
Forward voltage
IR1
ce
/D
isc
on
tin
Reverse current
IR2
IR3
Terminal capacitance
Ct
rf
an
Forward dynamic resistance
*1
Reverse recovery time *2
Ma
int
en
trr
Conditions
Min
Typ
Max
IF = 100 mA
IR = 100 µA
1.2
35
Unit
V
V
VR = 15 V
5
VR = 40 V
10
VR = 35 V, Ta = 100°C
VR = 6 V, f = 1 MHz
nA
100
µA
2.0
1.0
pF
IF = 3 mA, f = 30 MHz
3.6
Ω
IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
100
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *1: YHP 4191A RF IMPEDANCE ANALYZER
*2: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: November 2007
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKF00095AED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1