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TJ20A10M3

製品説明
仕様・特性

TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −100 V) • Enhancement-model: Vth = −2.0 to −4.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −100 V Drain-gate voltage (RGS = 20 kΩ) VDGR −100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −20 Pulse (Note 1) IDP −40 Drain power dissipation (Tc = 25°C) PD 35 W Single pulse avalanche energy (Note 2) EAS 124 mJ Avalanche current IAR −20 A Repetitive avalanche energy (Note 3) EAR 2.29 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Note: A 1: Gate 2: Drain 3: Source JEDEC JEITA ⎯ SC-67 TOSHIBA 2-10U1B Using continuously under heavy loads (e.g. the application of Weight: 1.7 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −25 V, Tch = 25°C, L = 500 μH, RG = 25 Ω, IAR = −20 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. Thermal Characteristics Characteristics 2 Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 3.57 °C / W Thermal resistance, channel to ambient Rth (ch−a) 62.5 °C / W 1 3 This transistor is an electrostatic sensitive device. Please handle with caution. 1 Start of commercial production 2009-03 2013-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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