SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 16A
l High Commutating (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM16GZ47
SM16GZ47A
SM16JZ47
SM16JZ47A
SYMBOL
Peak One Cycle Surge On−State
Current (Non−Repetitive)
ITSM
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
V
600
IT (RMS)
2
UNIT
400
VDRM
R.M.S On−State Current
(Full Sine Waveform Tc = 73°C)
I t Limit Value
RATING
2
16
150 (50Hz)
165 (60Hz)
A
A
2
I t
112.5
A s
di / dt
50
A / µs
PGM
5
W
PG (AV)
0.5
VGM
10
V
Peak Gate Current
IGM
2
A
Tj
−40~125
°C
Tstg
−40~125
°C
VISOL
1500
V
―
―
13−10H1A
W
Peak Gate Voltage
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
Average Gate Power Dissipation
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
1
Note 1: di / dt Test condition
VDRM = 0.5 × Rated
ITM ≤ 25A
tgw ≥ 10µs
tgr ≤ 250ns
iGP = IGT × 2.0
2001-07-13
