Preliminary Datasheet
RJK0652DPB
60V, 35A, 7.0m max.
Silicon N Channel Power MOS FET
Power Switching
R07DS0077EJ0200
Rev.2.00
Apr 09, 2013
Features
Low on-resistance
RDS(on) = 5.5 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
1, 2, 3
4
5
4
G
3
12
4
Source
Gate
Drain
S S S
1 2 3
Application
Switching Mode Power Supply
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Note 2
IAP
EAS Note 2
Pch Note3
ch-C
Tch
Tstg
Ratings
60
20
35
140
Unit
V
V
A
A
35
17.5
23
55
2.27
150
–55 to +150
A
A
mJ
W
C/W
C
C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
This product is for the low voltage drive ( 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(VGS(off)) which characteristics has been improved.
R07DS0077EJ0200 Rev.2.00
Apr 09, 2013
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