Silicon Switching Diodes
1N4150, 1N4150-1 & 1N3600
Features
•
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
•
Metallurgically Bonded
•
Hermetically Sealed
•
Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = +25°C
Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8”
Surge Current A:
2A (pk) tp = 8.3 mS, VRM = 0
Surge Current B:
4A (pk) tp = 1 us, VRM = 0
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
VBR
VRWM
TYPE
Number
IR = 10 μA
IR1
VR = 50 Vdc
TA = 25 °C
IR2
VR = 50 Vdc
TA =150°C
C
IR = 0; f = 1 MHz
ac signal = 50 mV (p-P)
Trr
IF = IR = 10 to 100 mA dc
RL = 100 Ω
V dc
V (pk)
μA dc
μA dc
pF
ns
1N3600
75
50
0.1
100
2.5
4.0
1N4151, -1
75
50
0.1
100
2.5
4.0
Forward Voltage Limits - All Types
VF1
IF = 1 mA dc
VF2
IF = 10 mA dc
VF3
IF = 50 mA dc
(Pulsed)
VF4
IF = 100 mA dc
(Pulsed)
V dc
V dc
V dc
V dc
V dc
minimum
0.540
0.660
0.760
0.820
0.870
maximum
0.620
0.740
0.860
0.920
1.000
Limits
VF5
IF = 200 mA dc
(Pulsed)
Outline Drawing
LEADED DESIGN DATA
0.080 MAX
2.03 DIA
CASE: Hermetically sealed glass case per MIL-S-19500/231, DO – 35
1.000
MIN
25.400
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
POLARITY
BAND
(CATHODE)
0.018 / 0.022
DIA
0.457 / 0.559
0.175
MAX
4.44
1.000
MIN
25.400
THERMAL RESISTANCE: (RӨJL): 250 °C/W maximum at L = 0.375 in
THERMAL IMPEDANCE: (ZӨJX): 70 °C/W maximum
POLARITY: Cathode end is banded.
All dimensions in INCH
mm
Revision Date: 12/7/2009
New Product
1