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2SB1156P

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 ■ Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating VCBO −130 VCEO −80 V Emitter-base voltage (Collector open) VEBO −7 IC −20 ICP −30 PC 100 Tj 150 Tstg −55 to +150 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package °C Storage temperature 2 W Junction temperature 1 A Collector power dissipation 5.45±0.3 A Peak collector current 0.6±0.2 10.9±0.5 V Collector current 2.0±0.1 1.1±0.1 V Collector-emitter voltage (Base open) 2.0±0.2 Unit Collector-base voltage (Emitter open) (3.5) Solder Dip 16.2±0.5 pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw °C Ta = 25°C 3 Parameter Symbol Collector-emitter voltage (Base open) ue ■ Electrical Characteristics TC = 25°C ± 3°C IC = −10 mA, IB = 0 Min Typ Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 hFE1 VCE = −2 V, IC = − 0.1 A tin VCB = −100 V, IE = 0 on Collector-base cutoff current (Emitter open) Forward current transfer ratio Max Unit −10 µA −50 µA −80 ICBO Di sc VCEO Conditions V  45 e/ nc te na M ain 30 VCE(sat)1 IC = −8 A, IB = − 0.4 A − 0.5 IC = −20 A, IB = −2 A −1.5 VBE(sat)1 IC = −8 A, IB = − 0.4 A −1.5 VBE(sat)2 IC = −20 A, IB = −2 A −2.5 Pl Base-emitter saturation voltage 60 VCE = −2 V, IC = −10 A VCE(sat)2 Collector-emitter saturation voltage VCE = −2 V, IC = −3 A hFE3 hFE2 * 260 V V Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = −8 A, IB1 = − 0.8 A, IB2 = 0.8 A 0.5 µs Storage time tstg VCC = −50 V 1.0 µs Fall time tf 0.2 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 Ordering can be made by the common rank (PQ rank hFE2 = 60 to 240) in the rank classification. SJD00044BED 1 Publication date: March 2003

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