TK80A08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80A08K3
Switching Regulator Applications
Unit: mm
•
Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 200 S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 75 V)
•
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
75
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
75
V
Gate-source voltage
VGSS
± 20
V
DC
(Note 1)
ID
80
Pulse
(Note 1)
IDP
320
Drain power dissipation (Tc = 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
443
mJ
Avalanche current
IAR
80
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
JEITA
Channel temperature
Tch
150
°C
TOSHIBA
Storage temperature range
Tstg
−55 to 150
°C
Weight: 1.7 g (typ.)
Drain current
A
1: Gate
2: Drain
3: Source
JEDEC
SC-67
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel and lead temperatures do not exceed 150°C.
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Note 2: VDD = 25 V, Tch = 25°C, L = 100 μH, IAR = 80 A, RG = 1 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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3
2009-12-21
