SM16GZ51, SM16JZ51
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR
SILICON PLANAR TYPE
SM16GZ51, SM16JZ51
AC POWER CONTROL APPLICATIONS
Unit: mm
Repetitive Peak Off−State Voltage: VDRM = 400V, 600 V
R.M.S On−State Current: IT (RMS) = 16 A
High Commutating (dv / dt): (dv / dt) c = 10 V / μs
Isolation Voltage: VISOL = 1500 V AC
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM16GZ51
SM16JZ51
SYMBOL
VDRM
R. M. S. On−state Current
(Full Sine Waveform Ta = 82°C)
IT (RMS)
Peak One Cylce Surge On−State
Current (Non−Repetitive)
ITSM
2
I t Limit Value
2
RATING
400
600
16
150 (50 Hz)
165 (60 Hz)
UNIT
V
A
A
2
I t
112.5
A s
Critical Rate of Rise of On−State
Current
(Note 1)
di / dt
50
A / μs
Peak Gate Power Dissipation
PGM
5
W
TOSHIBA
PG (AV)
0.5
W
Weight: 2.0 g (typ.)
Peak Gate Voltage
VGM
10
V
Peak Gate Current
IGM
2
A
Tj
−40~125
°C
Tstg
−40~125
°C
VISOL
1500
V
Average Gate Power Dissipation
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
JEDEC
―
JEITA
―
13-16A1A
Note 1: di / dt test condition
VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 μs, tgr ≤ 250 ns, igp = IGT × 2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-10-30
